ST is releasing a new type of device, called field effect rectifier diodes. The first devices are rated at 45 V and are based on a proprietary technology that achieves the best-in-class VF/IR?for a given silicon surface.
A 30 A device using FERD technology features a forward voltage drop (VF) reduced by about 140 mV compared to a conventional 30 A Schottky diode, without degrading the leakage current.
ST is committed to extending this new range of diodes, through multiple current ratings, slim-fit packages and improved voltage capability.
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